首页> 外文会议>ISCAS 2012;IEEE International Symposium on Circuits and Systems >A 127mW SAW-less LTE transmitter with LC-load bootstrapped quadrature voltage modulator in 130nm RFCMOS
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A 127mW SAW-less LTE transmitter with LC-load bootstrapped quadrature voltage modulator in 130nm RFCMOS

机译:具有130nm RFCMOS的LC负载自举正交电压调制器的127mW无SAW LTE发射机

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In this paper, using relative low cost 130nm RFCMOS, a high linearity, SAW-less, LTE transmitter with quadrature passive voltage mixer driven by bootstrapped 25% duty-cycle LO is presented. A tunable LC tank is added between mixer and Pre-PA amplifier (PPA). As the result, requirement on linearity of reconstruction lowpass filter (LPF), mixer and PPA are reduced. The linearity of mixer is further improved by programmable bootstrap voltages. Sideband leakage and LO Feedthrough (LOFT) can be calibrated by these bootstrap voltages. 54dB of total 84dB gain dynamic range is implemented in PPA by using binary gm cells and C-2C voltage division. 25% duty-cycle LO is generated with IQ-AND gating scheme. Delivering +1.3dBm power at 2.5GHz carrier, the transmitter achieves −46.5dB adjacent ACLR, −60.5dB LO leakage and −35.3dB sideband leakage, while consuming 127mW. The out-of-band noise is −156.2dBc/Hz at 120 MHz offset and the measured EVM is 2.4%.
机译:本文采用相对低成本的130nm RFCMOS,提出了一种具有自举25%占空比LO驱动的正交无源混频器的高线性度,无SAW的LTE发送器。在混频器和前置PA放大器(PPA)之间增加了一个可调LC储罐。结果,减少了对重构低通滤波器(LPF),混频器和PPA的线性的要求。可编程的自举电压可进一步改善混频器的线性度。可以通过这些自举电压来校准边带泄漏和LO馈通(LOFT)。通过使用二进制gm单元和C-2C分压,在PPA中实现了84dB的总增益动态范围中的54dB。 IQ-AND门控方案产生25%的占空比LO。该发射器在2.5GHz载波上提供+ 1.3dBm的功率,在相邻的ACLR处实现−46.5dB,−60.5dB的LO泄漏和−35.3dB的边带泄漏,同时消耗127mW。 120 MHz偏移时的带外噪声为-156.2dBc / Hz,测得的EVM为2.4%。

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