EPR study of a-Si structural relaxations

摘要

A detailed analysis of the EPR line-shape was performed on amorphous silicon (a-Si) samples obtained by Kr~+ ion implantation. it is shown that the line has predominantly Lorentzian character, however, a small Gaussian component is present as well. We monitored line-shape behavior during the relaxation and subsequent derelaxation process. A strong, fourfold increase in Gaussian component has been observed upon structural relaxation, suggesting spin ho-mogenization throughout the bulk. Subsequent ion implantation derelaxation caused gradual return ofthe Lorentzian character, i.e. cluster sturcture of the amorphous phase. direct c 1999 Elsevier Science B.V. All rights reserved.