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Investigation on a Broadband 220GHz Extended Interaction Klystron

机译:宽带220GHz扩展交互速调管的研究

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An extended interaction klystron, which is composed of an input cavity and an output cavity both based on 8 periods of staggered double rectangular waveguide structure (SDRWS) and an intermediate cavity based on 6 periods of SDRWS, is calculated in details on computer. After calculating S11of the input cavity and an output cavity and the eigenmodes of the intermediate cavity, the structural parameters of the input cavity and an output cavity and the intermediate cavity are determined, then PIC simulation is done to predict the ElK's performance, the results show that the EIK has an 1 GHz-wide of 3 dB band which cover 219.5-220.5GHz, a 456 W of maximum power and a 40.06 dB of maximum gain. Furthermore, stagger tuning by adjusting the structural parameter $a$ of the intermediate cavity is performed to analyse how $a$ affects the ElK's performances, and the results show that the 3 dB band of the EIK mainly depends on the passband of the input cavity and an output cavity, but also depends on the resonant frequency of the intermediate cavity in some cases. When the resonant frequency of the intermediate cavity is located at the lower or higher ends of the passband of the input cavity and an output cavity, the 3 dB band of the EIK may be extended to certain extent. Particularly, when the resonant frequency of the intermediate cavity is located at or beyond the higher ends of the passband of the input cavity and an output cavity, it is verified that the EIK has steady output signal featuring with pure spectrum and has flat gains over the 3 dB band. The final results of the stagger tuning show that, when the structural parameter $a$ of the intermediate cavity is 0.747 mm, the EIK reaches almost the optimum performances, with an 1 GHz-wide of 3 dB band which cover 219.5-220.7GHz, a 630 W of maximum power companied with a 11.3% of efficiency, and a 47 dB of maximum gain.
机译:在计算机上详细计算了一个扩展的相互作用速调管,它由一个输入腔和一个输出腔组成,该输入腔和输出腔均基于8个交错的双矩形波导结构(SDRWS)周期和一个基于6个周期的SDRWS周期的中间腔。计算S \ n 11 \ n输入腔和输出腔以及中间腔的本征模,确定输入腔和输出腔以及中间腔的结构参数,然后进行PIC仿真以预测ElK的性能,结果表明EIK具有1 GHz宽的3 dB频带,覆盖219.5-220.5GHz,最大功率456 W,最大增益40.06 dB。此外,通过调整结构参数\ n $ a $ \ n来分析\ n $ a $ \ n影响ElK的性能,结果表明, EIK主要取决于输入腔和输出腔的通带,但在某些情况下还取决于中间腔的谐振频率。当中间腔的谐振频率位于输入腔和输出腔的通带的下端或上端时,EIK的3 dB频带可能会扩展到一定程度。特别是,当中间腔的谐振频率位于输入腔和输出腔的通带的上端或更高端时,可以证明EIK具有稳定的输出信号,具有纯频谱特性,并且在整个输出端具有平坦的增益。 3 dB频段。交错调整的最终结果表明,当结构参数\ n \n的中间腔为0.747毫米,EIK几乎达到了最佳性能,其1 GHz宽的3 dB频带覆盖了219.5-220.7GHz,最大功率为630 W,效率为11.3%,最大增益为47 dB。

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  • 会议地点 Busan(KR)
  • 作者单位

    Institute of Electronics, Chinese Academy of Sciences, Beijing, 101400, China;

    Institute of Electronics, Chinese Academy of Sciences, Beijing, 101400, China;

    University of Chinese Academy of Sciences, Beijing, 100039, China;

    Institute of Electronics, Chinese Academy of Sciences, Beijing, 101400, China;

    University of Chinese Academy of Sciences, Beijing, 100039, China;

    Institute of Electronics, Chinese Academy of Sciences, Beijing, 101400, China;

    Institute of Electronics, Chinese Academy of Sciences, Beijing, 101400, China;

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  • 入库时间 2022-08-26 14:32:34

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