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首页> 外文会议>2019 International Vacuum Electronics Conference >Design of a W-band traveling-wave tube based on sine waveguide slow-wave structure with sheet electron beam
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Design of a W-band traveling-wave tube based on sine waveguide slow-wave structure with sheet electron beam

机译：基于薄电子束正弦波慢波结构的W波段行波管设计

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摘要

A W-band TWT based upon flat-roofed sine waveguide slow-wave structure is designed. The transmission characteristics of high frequency structure with input/output window show that the $mathbf{S}_{pmb{2}}$ 1 is more than −4 dB and $mathbf{S}_{pmb{11}}$ is less than −16 dB. The beam-wave interaction results show that the output power is more than 40 W range from 90 GHz to 100 GHz with voltage of 19 kV and current density of 50 mA/cm2.
机译：设计了基于平顶正弦波导慢波结构的W波段TWT。具有输入/输出窗口的高频结构的传输特性表明\ n $\\mathbf{S}_{\\pmb{2}}$\n 1大于−4 dB，\ n $ \\ mathbf {S } _ {\\ pmb {11}} $ \ n小于-16 dB。束波相互作用结果表明，输出功率在90 GHz至100 GHz范围内大于40 W，电压为19 kV，电流密度为50 mA / cm \ n 。 www.w3.org/1998/Math/MathML \“ xmlns：xlink = \” http：//www.w3.org/1999/xlink \“> 2 \ n。

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  • 来源
  • 会议地点 Busan(KR)
  • 作者

    S. Z. Fang; J. Xu; X. Lei; X. B. Jiang; P.C. Yin; L. Li; G.X. Wu; R. C. Yang; Q. Li; H.R. Yin; L. N. Yue; G. Q. Zhao; Y. B. Gong; Y.Y Wei; W.X. Wang; X. Xu; Y. Lui;

  • 作者单位

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China;

    State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System (CEMEE), Luoyang, 471003, China;

    Southwest China Research Institute Of Electronic Equipment, Chengdu, Sichuan, 610036, China;

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