首页> 外文会议>International Symposium on Ultra Clean Processing of Silicon Surfaces(UCPSS); 20060918-20; Antwerp(BE) >Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films
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Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films

机译:偏压,压力和温度对超低k膜等离子体损伤的影响

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1. Degree of plasma damage (hydrophilisation) depends on chemistry, pressure, ion energy and temperature. 2. Comparison of samples 2-5 with 19-20 (Figure 2) demonstrates that Ar ion bombardment densifies the film but they remain sufficiently hydrophobic. NH_3 plasma even without intensive ion bombardment makes low-k film extremely hydrophilic. 4. Temperature decreases degree of hydrophobisation but increases densification. 3. Degree of damage in N_2/H_2 plasma depends on exposure time. Maximum damage in SF_6/O_2 plasma is succeeded very fast and no time dependence was observed. Degree of damage in CF_4/O_2 plasma is much smaller than in SF_6/O_2 plasma, probably because of limitation of penetration of O radicals by adsorbed CFx radicals and CFx polymer. 4. Helium pre-treatment and He additive to H_2 plasma decrease the plasma damage, especially at moderate temperatures.
机译:1.血浆损伤(亲水化)的程度取决于化学性质,压力,离子能量和温度。 2.样品2-5与19-20(图2)的比较表明,Ar离子轰击使膜致密,但它们仍具有足够的疏水性。即使没有强烈的离子轰击,NH_3等离子体也使低k膜具有极强的亲水性。 4.温度降低了疏水化程度,但是增加了致密化。 3. N_2 / H_2等离子体中的损坏程度取决于暴露时间。 SF_6 / O_2等离子体中的最大破坏很快就成功了,并且没有观察到时间依赖性。 CF_4 / O_2等离子体中的破坏程度比SF_6 / O_2等离子体中的破坏程度小得多,这可能是由于吸附的CFx自由基和CFx聚合物对O自由基的渗透的限制。 4.氦气预处理和向H_2等离子体中添加He可以减少等离子体损害,特别是在中等温度下。

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