On The Thermal Excited Resonant Silicon Micro Structural Pressure Sensor

摘要

Some important features of a thermal excited resonant silicon micro structural pressure sensor are discussed in this paper. Its sensing component is a silicon bossed structure, whose preliminary sensing unit is a square silicon diaphragm; the final sensing unit is a silicon beam resonator. Based on the thermally exciting and piezoresistive detecting means of the above silicon sensor, the operating mechanism, signal transferring process and the amplitude and phase conditions of the self-exciting closed loop system are analyzed for the above silicon sensor. The model of the average temperature-rise of the beam resonator is presented, which is caused by the thermal exciting resistor and detecting resistor. The output frequency characteristics of the beam resonator of the silicon sensor are obtained, under considering the comprehensive action of the applied pressure and the constant temperature-rise.