A Novel Cu Contact Displacement Method for Cu Interconnect Fabrication

摘要

In this study, the feasibility of contact displacement of copper from CVD amorphous silicon into sub micro trench and vias in ULSI circuits would be investigated. This novel method for electroless Cu plating by means of electrochemical redox with a-Si will be explored in detail. By this way, not only high quality of copper wiring could be obtained, but also benefit from the simplified process for the intrinsic selectivity Cu deposition. As a result, this selective contact displacement process would be promising for overcoming the current Cu patterning and CMP process issues related to the removing selectivity of Cu and barrier. Proposed possible process-flow with implement of this novel method for several kinds of Cu interconnect integration would be summarized and discussed.