ESR Studies of High-Energy Phosphorus-Ion Implanted Synthetic Diamond Crystals

摘要

Phosphorus is among potential n-type dopants in diamond. High pressure synthetic diamond crystals of type Ha implanted with high energy (9-18 MeV) phosphorus ions have been studied by using electron spin resonance (ESR) technique. The intensity and the linewidth of the ESR signal attributed to the dangling bond of the amorphous phase varied with the implantation dose, suggesting the nature of the amorphization varies with the dose. The ESR signals of point defects have been observed in the low dose as-implanted crystals and in the high dose crystals annealed at high temperature and at high pressure.