首页> 外文会议>International cryogenic engineering conference 1998(ICEC17) >Effect of Ge Addition on Microstructure and Critical Current Density of Internal Tin Processed Nb_3Sn Strands
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Effect of Ge Addition on Microstructure and Critical Current Density of Internal Tin Processed Nb_3Sn Strands

机译:锗的添加对内部锡处理的Nb_3Sn钢绞线的组织和临界电流密度的影响

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摘要

In order to investigate effect of Ge addition to the Cu matrix on the microstructure and the critical current density, three kinds of the internal tin processed Nb_3Sn strands with pure Cu, Cu-0.4wt%Ge and Cu-0.8wt%Ge alloys were prepared. Nb_3Sn formation was observed to be suppressed by Ge addition. J_c in high magnetic fields, n value and the B_(c2) was confirmed to be improved by the Ge addition compared to the none additive one.
机译:为了研究添加铜基体中的锗对组织和临界电流密度的影响,制备了三种内部锡处理的纯铜,纯铜(Cu-0.4wt%Ge)和纯铜(Cu-0.8wt%Ge)的Nb_3Sn合金线。观察到通过添加Ge抑制了Nb_3Sn的形成。与无添加剂相比,Ge的添加可改善强磁场下的J_c,n值和B_(c2)。

著录项

  • 来源
  • 会议地点 Bournemouth(GB);Bournemouth(GB)
  • 作者单位

    Korea Electrotechnology Research Institute, Changwon, 641-600 Republic of Korea;

    Korea Electrotechnology Research Institute, Changwon, 641-600 Republic of Korea;

    Korea Electrotechnology Research Institute, Changwon, 641-600 Republic of Korea;

    Korea Electrotechnology Research Institute, Changwon, 641-600 Republic of Korea;

    Korea Electrotechnology Research Institute, Changwon, 641-600 Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 制冷工程;
  • 关键词

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