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Designing Reversible Memory

机译:设计可逆内存

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This paper presents the issues involved in designing a memory system which is reversible and therefore does not erase information during its operation. High level issues of how the memory is accessed are discussed, along with low level switching circuit implementation issues, all involving techniques to avoid information erasure. A number of reversible switching circuit topologies have been found. The paper concludes with a discussion of the XRAM chip, an eight word by eight bit reversible memory chip submitted for fabrication in a 0.5 mum CMOS process. This chip performs exchange operations rather than traditional read/write operations, and is implemented in a reversible, adiabatic logic family, SCRL.
机译:本文提出了设计可逆的存储系统所涉及的问题,因此在其运行过程中不会擦除信息。讨论了如何访问存储器的高级问题,以及低级开关电路实现问题,所有这些都涉及避免信息擦除的技术。已经发现了许多可逆的开关电路拓扑。本文以XRAM芯片的讨论作为结束,该XRAM芯片是提交给0.5 mm CMOS工艺制造的8字乘8位可逆存储芯片。该芯片执行交换操作,而不是传统的读/写操作,并以可逆的绝热逻辑系列SCRL实现。

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