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CHARACTERIZATION AND APPLICATION OF SOG IN IVTERLEVEL PLANARIZATION

机译:SOG的表征及其在平面规划中的应用

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摘要

In this article, SOG material and interlevel dielectric planarizing methods using SOG are introduced. Compared with other methods, SOG has the advantages of simplifying process, good planarizing effect and not affecting other devices on substrate. SOG films have SiO_2-like characteristics and inherent quality of planarizing the underlying topography and offer an attractive approach to dielectric planarization. There are three often used methods with SOG-Total Etchback, Partial Etchback and Non-Etchback. We have used SOG as the planarization material in our laboratory. By using ACCUGLASS P-114LS SOG, we have made some experiments with the above three planarizing methods. In this article, the detailed processes and their results are also introduced.
机译:本文介绍了SOG材料和使用SOG的层间电介质平坦化方法。与其他方法相比,SOG具有简化工艺,良好的平坦化效果且不影响基板上其他器件的优点。 SOG膜具有类似于SiO_2的特性和平坦化基础形貌的固有质量,并提供了一种有吸引力的介电平坦化方法。 SOG-Total Etchback,部分Etchback和Non-Etchback有三种常用方法。我们在实验室中已将SOG用作平面化材料。通过使用ACCUGLASS P-114LS SOG,我们对上述三种平面化方法进行了一些实验。本文还介绍了详细的过程及其结果。

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