Surface properties of In(SbAs)

摘要

Abstract: The RF magnetron sputtering growth and characteristics of ZnS and SiO$-2$/ passivants on the surface of bulk n-type InAsSb have been reported. Our investigations include InAsSb surface preparation and in-situ pretreatment, deposition- induced surface damage, interface charge, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The effect of sputtering growth conditions parameters (deposition temperature, pressure of argon, and RF power) is also reported. The sputtered ZnS layers exhibit excellent dielectric, insulating and mechano-chemical, as well as interface properties. The interfaces characterized by slight accumulation and small (after preservation of the thin natural oxide) hystereses are demonstrated. The SiO$-2$/ layers have poor adherence and high density of pinholes. The samples with larger surface state densities have been observed.!7