首页> 外文会议>International Conference on Recrystallization and Grain Growth(ReX amp; GG III); 20070610-15; Jeju Island(KR) >Grain-Boundary Structure and Phase-Transformation Mechanism in Yttria-Stabilized Tetragonal Zirconia Polycrystal
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Grain-Boundary Structure and Phase-Transformation Mechanism in Yttria-Stabilized Tetragonal Zirconia Polycrystal

机译:氧化钇稳定的四方氧化锆多晶体的晶界结构和相变机理

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The microstructures in 3 mol% Y_2O_3-stabilized tetragonal zirconia polycrystal (Y-TZP) sintered at 1100°-1650℃ were investigated to clarify cubic-formation and grain-growth iriechanisms. The cubic phase in Y-TZP appeared at 1300℃ and its mass fraction increased with increasing sintering temperature. High-resolution transmission electron microscopy (HRTEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS) measurements revealed that no amorphous layer existed along the grain-boundary faces in Y-TZP, and Y~(3+) ions segregated not only along the tetragonal-tetragonal phase boundaries but also along tetragonal-cubic phase boundaries. Scanning transmission electron microscopy (STEM) and nanoprobe EDS measurements revealed that the Y3+ ion distribution was nearly homogeneous up to 1300℃, but cubic phase regions with high Y~(3+) ion concentration clearly formed inside grains at 1500℃. These results indicate that cubic phase regions are formed from the grain boundaries and/or the multiple junctions in which Y~(3+) ions segregated. We termed such a new diffusive transformation phenomenon "grain boundary segregation-induced phase transformation (GBSIPT)". The grain-growth mechanism is controlled by the solute-drag effect of Y~(3+) ions segregating along the grain boundary.
机译:研究了在1100°-1650℃烧结的3 mol%Y_2O_3稳定的四方氧化锆多晶体(Y-TZP)的微观结构,以阐明立方晶形成和晶粒长大的机制。 Y-TZP中的立方相出现在1300℃,其质量分数随烧结温度的升高而增加。高分辨率透射电子显微镜(HRTEM)和纳米探针X射线能量色散光谱(EDS)测量表明,Y-TZP的晶界面上不存在非晶层,并且Y〜(3+)离子不仅沿四角形-四角形相界,但也沿四角形-立方相界。扫描透射电子显微镜(STEM)和纳米探针EDS测量表明,在1300℃以下,Y3 +离子分布几乎均匀,但在1500℃时,晶粒内部明显形成了Y〜(3+)离子浓度高的立方相区域。这些结果表明,立方晶相区域是由晶界和/或Y〜(3+)离子隔离的多个结形成的。我们称这种新的扩散转变现象为“晶界偏析诱导的相变(GBSIPT)”。晶粒长大机理受沿晶界偏析的Y〜(3+)离子的溶质拖曳作用控制。

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