首页> 外文会议>International Conference on Ferrites(ICF-9); 2004; San Francisco,CA(US) >RECENT NEWS ON GUFP AND THE FINDING OF THE LINEAR ASYMMETRIC ORDER OF THE LINEAR ANTIPHASE BOUNDARY IN Fe_3O_4 WITH THE IDEA OF THE NEW NANOMETER MASS MEMORY BY NEW IRON-GROUP OXIDES
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RECENT NEWS ON GUFP AND THE FINDING OF THE LINEAR ASYMMETRIC ORDER OF THE LINEAR ANTIPHASE BOUNDARY IN Fe_3O_4 WITH THE IDEA OF THE NEW NANOMETER MASS MEMORY BY NEW IRON-GROUP OXIDES

机译:关于GUFP的最新消息以及Fe_3O_4中线性对映体边界的线性不对称阶数的发现,以及通过新的铁基团簇氧化物实现新的纳米质量记忆的想法

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GUFP has made a fantastic development in recent years in almost all basic areas of physics. Therefore, a short introduction of them has been presented in front of the paper. The idea of the new mass memory comes from the geometrical study of the anti-phase structure of the low temperature phase of Fe_3O_4 , whose transition temperature is around 125K. We found that the anti-phases exist intrinsically and, if α- and γ- anti-phases coexist and can have a corner boundary line along a-axis, we have the straight line sequence of Fe~(2+) and Fe~(3+) ions alternatively. There are two configurations in which Fe~(2+) and Fe~(3+) are exchanged. One essential finding is that the nearest neighbor configurations of these two lines are different. Therefore, we can assign 0 and 1 to either of the configurations. The switching of the configuration will be expected by applying a suitable electric, field pulse or pulses. The length of the line and the density of the lines for a unit memory must be determined so as to make for the device to be able to operate most effectively. Fe_3O_4 may be not the best material for this device and other iron-group oxides with the effective ordering critical temperature higher than the room temperature should be investigated. Even if there is no other material than Fe_3O_4 , the expected minimum area for the one unit with the maximum density of the devices may be 4 nm 4 nm , that must be charming for the super-computers.
机译:近年来,GUFP在物理学的几乎所有基本领域都取得了惊人的发展。因此,本文前面对它们进行了简短介绍。新的大容量存储器的思想来自对Fe_3O_4低温相的反相结构的几何研究,Fe_3O_4的相变温度约为125K。我们发现反相位本质上存在,并且如果α和γ反相位共存并沿a轴具有角边界线,则我们具有Fe〜(2+)和Fe〜( 3+)离子。 Fe〜(2+)和Fe〜(3+)交换有两种构型。一个重要发现是这两条线的最近邻居配置不同。因此,我们可以将0和1分配给任一配置。通过施加合适的一个或多个电场脉冲,可以预期配置的切换。必须确定单元存储器的线的长度和线的密度,以使设备能够最有效地工作。 Fe_3O_4可能不是该器件的最佳材料,应研究有效订购临界温度高于室温的其他铁族氧化物。即使没有Fe_3O_4以外的其他材料,具有最大设备密度的一个单元的预期最小面积也可能是4 nm 4 nm,这对于超级计算机来说是很诱人的。

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