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Channel Models for Physical Unclonable Functions based on DRAM Retention Measurements

机译:基于DRAM保留测量的物理不可克隆功能的通道模型

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Physical Unclonable Functions (PUFs) are hardware primitives, which exploit intrinsic randomness occurring from variations in manufacturing processes, to generate random binary sequences (responses) that can be used for secure generation and storage of cryptographic keys. In recent times, intrinsic randomness present in the behavior of memory cells is used for that purpose. While SRAM is the type of memory that has most often been chosen in literature, the use of DRAM has emerged during the last years. In this work, we propose two methods to remove the bias in binary sequences extracted from DRAM. For each method, we derive a channel model, which captures the instabilities that occur when re-extracting responses from DRAM. Although knowledge about the channel is beneficial when selecting or designing error-correcting codes, it is often neglected in the context of PUFs. To provide a proof of concept, we use data generated by exploiting the retention behavior of DRAM.
机译:物理不可克隆功能(PUF)是硬件基元,其利用制造过程中的变化产生的固有随机性来生成可用于安全生成和存储加密密钥的随机二进制序列(响应)。近年来,存在于存储单元的行为中的固有随机性用于该目的。尽管SRAM是文献中最常选择的存储器类型,但在最近几年中出现了DRAM的使用。在这项工作中,我们提出了两种方法来消除从DRAM中提取的二进制序列中的偏差。对于每种方法,我们导出一个通道模型,该模型捕获了从DRAM中重新提取响应时发生的不稳定性。尽管有关信道的知识在选择或设计纠错码时是有益的,但在PUF的上下文中常常被忽略。为了提供概念证明,我们使用通过利用DRAM的保留行为生成的数据。

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