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GHz-Bandwidth Nonpolar InGaN/GaN Micro-LED Operating at Low Current Density for Visible-Light Communication

机译：GHz带宽非极性InGaN / GaN Micro-LED以低电流密度工作，实现可见光通信

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摘要

. The high-speed at low current density is attributed to the large electron-hole wavefunction overlap in nonpolar QWs leading to a shorter carrier lifetime.

机译：。低电流密度下的高速归因于非极性QW中较大的电子-空穴波函数重叠，从而缩短了载流子寿命。

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来源
《International Semiconductor Laser Conference》|2018年|1-2|共2页
会议地点 Santa Fe(US)
作者
A. Rashidi; M. Monavarian; A. Aragon; A. Rishinaramangalam; D. Feezell;
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作者单位

Center for High Technology Materials (CHTM) University of New Mexico Albuquerque NM 87106 USA;

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关键词
Light emitting diodes; Current density; Bandwidth; Modulation; Radio frequency; Impedance; Charge carrier lifetime;

机译：发光二极管;当前密度;带宽;调制;无线电频率;阻抗;电荷载体寿命;

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专利

1. High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication [J] . Arman Rashidi, Morteza Monavarian, Andrew Aragon, IEEE Photonics Technology Letters . 2017,第4期

机译：用于可见光通信的高速非极性InGaN / GaN LED
2. High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication [J] . Rashidi Arman, Monavarian Morteza, Aragon Andrew, Theoretical and Experimental Plant Physiology . 2017,第4期

机译：用于可见光通信的高速非极性Ingan / GaN LED
3. Influence of dislocation density on carrier injection in InGaN/GaN light-emitting diodes operated with alternating current [J] . Lee Dong-Yul, Han Sang-Heon, Ju Lee Dong, Applied Physics Letters . 2013,第1期

机译：位错密度对交流电操作的InGaN / GaN发光二极管中载流子注入的影响
4. GHz-Bandwidth Nonpolar InGaN/GaN Micro-LED Operating at Low Current Density for Visible-Light Communication [C] . A. Rashidi, M. Monavarian, A. Aragon, IEEE International Semiconductor Laser Conference . 2018

机译：GHz - 带宽非极性Ingan / GaN微LED以低电流密度运行，可见光线通信
5. GaN-Based Micro-LED Visible Light Communication Line-of-Sight VLC with Active Tracking and None-Line-of-Sight VLC Demonstration [D] . Lu, Zhijian. 2017

机译：基于GaN的微LED可见光通信视线VLC，带有主动跟踪和无线线VLC演示
6. Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density [O] . Shiqiang Lu, Jinchai Li, Kai Huang, 2021

机译：InGaN微LED结构的设计用于提高低电流密度的量子效率
7. Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates [O] . Liu B., Zhang R., Xie Z. L., 2007

机译：LiAlO2（100）衬底上的非极性m平面薄膜GaN和InGaN / GaN发光二极管

GHz-Bandwidth Nonpolar InGaN/GaN Micro-LED Operating at Low Current Density for Visible-Light Communication

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