Increase Efficiency and Lower System Cost with 100KHz, 10kW Silicon Carbide (SiC) Interleaved Boost Circuit Design

摘要

In this paper, design and performance of a 100KHz, 10KW interleaved hard-switching boost DC/DC converter utilizing Cree commercial 1200V Silicon Carbide (SiC) MOSFETs and Schottky diodes are presented. Ultra-low switching losses of the SiC power semiconductors enables switching frequencies to be increased significantly over silicon implementations. Combined with an interleaved DC/DC topology, the effective operating frequency is up to five times higher than achievable with high-speed Si IGBTs to achieve the same 10KW boost circuit. The effective 100KHz operation results in significant reduction in system size, weight and cost of magnetic and capacitive elements. Design considerations, EMI optimization techniques and detailed test results are introduced.