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Franz-Keldysh effect in T-wire semiconductor structures inapplied magnetic field

机译:施加磁场的T线半导体结构中的Franz-Keldysh效应

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We have calculated the optical absorption spectra of magnetoexcitons in T-wiresemiconductor. It is calculated using the semiconductor Bloch equations in time and real-spacedomains. The peak and the linewitdth of the fundamental exciton transition are investigatedas a function of the applied magnetic and static electric field. The latter is applied alongthe wire axis and induces a broadening in the absorption spectra line, energy shift, and thecharacterisitic Franz-Keldysh oscillations. The exciton binding energy enhances increasingthe magnetic field strength.
机译:我们已经计算了T线半导体中磁激子的光吸收光谱。它是使用半导体Bloch方程在时域和实域中计算的。研究了基本激子跃迁的峰和线宽与所施加的磁场和静电场的关系。后者沿线轴施加,并引起吸收光谱线变宽,能量移动和特征性的弗朗兹-凯尔迪什振荡。激子结合能增强了磁场强度。

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