Piezoelectric Property of CVD ZoO Film for Pressure Micro Sensor

摘要

Piezoelectric properties of a zinc-oxide (ZnO) thin film were investigated. The ZnO thin film was grown on a silicon substrate by a plasmaenhanced metal organic chemical vapor deposition (MOCVD). In order to enhance its resistivity, lithium (Li) was doped. The Li-doped ZnO thin film had higher electrical resistivity than non Li-doped one. A diaphragm structure for a pressure sensor was fabricated with diamond drilling and chemical etching. Resonant frequency test was carried out to measure piezoelectric properties of a pressure micro sensor.