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Edge dislocation emission from nanovoid with the effect of neighboring nanovoids and surface stress

机译:纳米空隙的边缘位错发射受邻近纳米空隙和表面应力的影响

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Experimental evidence,molecular dynamics simulations and theoretical analyses of nanovoid growth and coalescence in ductile materials indicate that nanovoid growth,coalescence,and stain localization depend strongly on distribution and volume fraction of the nanovoids in ductile porous materials.In the light of this mechanism,a generalized self-consistent theoretical model to describe the dislocation emitted from nanovoid accounting for the effect of neighboring nanovoids is suggested.The explicit solution to the critical stress is derived by means of the complex variable method.The influence of the nanovoid size,the surface effect,nanovoid content and uniform distribution density of neighboring nanovoids in the effective medium on the critical condition required for dislocation emission from nanovoid surface is discussed.
机译:实验证据,分子动力学模拟和延性材料中纳米空隙的生长和聚结的理论分析表明,纳米空隙的生长,聚结和污渍的定位强烈依赖于延性多孔材料中纳米空隙的分布和体积分数。提出了广义自洽理论模型来描述纳米空隙所产生的位错,以解决相邻纳米空隙的影响。通过复变量方法得出了临界应力的显式解。纳米空隙尺寸的影响,表面效应讨论了有效介质中纳米孔表面的位错含量和相邻纳米孔的均匀分布密度。

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