Development of Mid-wave 320×256 Infrared Focal Plane Array in Korea

摘要

This paper reports the development of mid-wave 320×256 HgCdTe IRFPA with 30μm pixel pitch since 2002 in Korea. All key technologies such as HgCdTe photodiode array fabrication process, the design of silicon readout integrated circuit and hybridization process between HgCdTe photodiode array and ROIC including underfill encapsulation process are studied and realized. The fabricated IRFPA shows good electro-optical performances such as operability over 99%, NETD of ～17mK and there is no degradation in the operability during 500 thermal cycles.