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12 Mega-pixel, 1,000 fps Visible Camera with a Nanowatt A/D Converter at Each Pixel

机译:每个像素都有12兆像素,1,000 fps的可见摄像机和纳瓦级A / D转换器

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A large format, area array, digital visible light camera was developed based on A/D conversion at each pixel. Production CMOS technology was used in the development of a monolithic front side illuminated photo diode pixel. Each pixel includes a one loop MOSAD, (Multiplexed Oversample A/D) converter, photo diode, and buffered output to support a very large array format operating at high frame rates. MOSAD is a modification of the delta sigma approach to A/D conversion. The 12 megapixel sensor consists of a 4,000X3,000 pixel array capable of up to 1,000 frames per second sample rate. Alternate approaches to satisfy the 1,000 fps sample rate with up to 10 bits dynamic range were analyzed. To approximately fit a 35 millimeter optics format, a pixel size of 8.5 μm was selected. There are no operational amplifiers required at the pixel to perform the A/D function, thus allowing a high fill factor. With this pixel size, a 48% fill factor and 38% photo diode area was achieved. A single process run was completed yielding five 8 inch wafers each containing 27 camera die. The single poly, three metal AMIS 0.35 μm CMOS process was used in the fabrication process. Selected die were directly mounted on a specially designed carrier daughter board. Camera support electronics were designed and fabricated to allow sampling of the camera output using commercial standard Camera Link interfacing. Off the shelf 35 Millimeter optics was used to validate imaging capabilities of the sensor. Tests show that the first iteration sensor chip design works to the fundamental requirements and can image.
机译:基于每个像素的A / D转换,开发了一种大幅面,面积阵列,数字可见光相机。在单片正面照明光电二极管像素的开发中使用了生产CMOS技术。每个像素都包括一个单环MOSAD,(多路过采样A / D)转换器,光电二极管和缓冲输出,以支持以高帧速率工作的超大型阵列格式。 MOSAD是对A / D转换的delta sigma方法的修改。这个12兆像素的传感器由4,000X3,000像素阵列组成,能够以每秒1,000帧的速度采样。分析了在高达10位的动态范围内满足1,000 fps采样率的替代方法。为了大致适合35毫米光学格式,选择了8.5μm的像素大小。像素处不需要运算放大器来执行A / D功能,因此可以实现高填充系数。使用此像素大小,可实现48%的填充因子和38%的光电二极管面积。完成一个过程,就得到了五个8英寸的晶圆,每个晶圆包含27个相机芯片。在制造过程中使用了单聚三金属AMIS 0.35μmCMOS工艺。所选管芯直接安装在专门设计的载体子板上。相机支持电子设备的设计和制造允许使用商业标准Camera Link接口对相机输出进行采样。现成的35毫米光学器件用于验证传感器的成像功能。测试表明,第一次迭代传感器芯片设计符合基本要求并可以成像。

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