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Laser-induced damage threshold of nanoporous single-layer ALD antireflective coatings

机译:纳米多孔单层ALD减反射膜的激光损伤阈值

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摘要

Atomic layer deposition (ALD) enables coating complex shaped substrates with excellent uniformity along the surfaceof the optic. Recently developed nanoporous SiO_2 layers have been applied as single layer antireflection coatings onfused silica substrates at both 1064 nm and 532 nm wavelengths. The LIDT in the nanosecond regime at both 1064 nmand 532 nm of these nanoporous SiO_2 coatings as well as the bare substrates were investigated. The stability of thecoatings with respect to LIDT has been evaluated under normal atmospheric conditions, dry air with relative humidity <10% and nitrogen atmosphere. The multiple pulse damage characteristic for 5000 shots showed in all cases nosignificant pulse dependence. At 532 nm wavelength, the 0%-LIDT value is between 60 J/cm~2 and 70 J/cm~2, which iscomparable to the values measured on uncoated substrates (80 J/cm~2). In case of 1064 nm the 0%-LIDT is only between40 J/cm~2 and 50 J/cm~2 (uncoated substrate: 100 J/cm~2) which is attributed to generated defects during the fabricationprocess.
机译:原子层沉积(ALD)可以使复杂形状的基底沿光学器件的表面\ n \ n均匀地涂覆。最近开发的纳米多孔SiO_2层已作为单层抗反射涂层应用于1064 nm和532 nm波长的熔融二氧化硅衬底上。研究了这些纳米多孔SiO_2涂层以及裸露基底在1064 nm \ r \ n和532 nm处纳秒级的LIDT。已经在正常大气条件,相对湿度 10%的干燥空气和氮气气氛下评估了涂料相对于LIDT的稳定性。在所有情况下,5000次射击的多脉冲损伤特征都没有显着的脉冲依赖性。在532 nm波长下,0%-LIDT值在60 J / cm〜2和70 J / cm〜2之间,与在未镀膜的基材上测得的值(80 J / cm〜2)比较。在1064 nm的情况下,0%-LIDT仅在\ n \ n40 J / cm〜2和50 J / cm〜2之间(未涂覆的基材:100 J / cm〜2),这归因于在制造过程中产生的缺陷\ r \ n进程。

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  • 来源
    《Laser-Induced Damage in Optical Materials 2018》|2018年|108051V.1-108051V.8|共8页
  • 会议地点 0277-786X;1996-756X
  • 作者单位

    RhySearch, Werdenbergstrasse 4, 9471 Buchs SG, Switzerland,thomas.gischkat@rhysearch.ch,phone +41 81 755 4956;

    RhySearch, Werdenbergstrasse 4, 9471 Buchs SG, Switzerland,NTB Interstate University of Applied Sciences, Werdenbergstrasse 4, 9471 Buchs SG, Switzerland;

    RhySearch, Werdenbergstrasse 4, 9471 Buchs SG, Switzerland;

    Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str. 15, 07745 Jena, Germany,Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein-Str. 7, 07745 Jena, Germany,a.szeghalmi@uni-jena.de,phone +49 3641 807 320;

    Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Str. 15, 07745 Jena, Germany;

    RhySearch, Werdenbergstrasse 4, 9471 Buchs SG, Switzerland;

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