Field-effect passivation by negative charge on boron emitter and boron-doped surfaces by a novel low-cost plasma charge injection

摘要

negative charge by this plasma charging method gave ~1.35% and ~0.36% increases in absolute cell efficiencies for n-type PERT and p-type PERC cells, respectively. Detailed characterization and analysis show that these improvements are due to enhanced surface passivation resulting from the formation of accumulation layer on p-type surfaces which reduces the SRH recombination and shunting associated with depletion and inversion layers.