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Magnetic domains and twin microstructure of single crystal Ni-Mn-Ga exhibiting magnetic shape memory effect

机译:表现出磁形状记忆效应的单晶Ni-Mn-Ga的磁畴和孪生微观结构

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Magnetic Shape Memory Effect or more precisely magnetic-field-induced-structural reorientation (MIR) generate large strain (up to 12 %) and fast response (around 1 kHz) in a moderate magnetic field below 1 T. The strain is caused by twin microstructure reorientation in which the maximum generated strain is determined by difference of lattice constants of the pseudotetragonal structure a = b > c, i.e. ε = ε = 1-c/a. The reorientation is mediated by twin boundary motion. Very high mobility is, therefore, necessary condition for the existence of the effect. Recently considering more precise structural description of 10M martensite of Ni-Mn-Ga alloys as monoclinic, i.e. a > b > c and γ π 90, we showed that there are two different kinds of mobile a-c twin boundary, Type I and II with different microstructure [1]. The boundaries differ not only in magnitude of twinning stress needed to move twin boundary, i.e. in mobility, but also in temperature dependence of the mobility or twinning stress [2]. Despite of the simplicity of the moving interface the twinned structure is complex [3]. The model of the movable Type II twin boundary is shown in the figure. The twinned structure consists apart of the moving a-c twin boundary the modulation twinning bands and a-b twinning.
机译:磁性形状记忆效应或更确切地说是磁场诱导的结构重定向(MIR)在1 T以下的中等磁场中会产生大应变(高达12%)和快速响应(大约1 kHz)。应变是由孪晶引起的微观结构的重新定向,其中最大产生的应变由拟四边形结构的晶格常数的差a = b> c决定,即ε=ε= 1-c / a。重取向由双边界运动介导。因此,非常高的移动性是效果存在的必要条件。最近,考虑将Ni-Mn-Ga合金的10M马氏体更精确地描述为单斜晶,即a> b> c和γπ90,我们发现存在两种不同类型的可动ac孪晶边界,I型和II型具有不同的微观结构[1]。边界不仅在移动双边界所需的孪生应力的大小上不同,即在迁移率方面,而且在迁移率或孪生应力的温度依赖性上也不同[2]。尽管移动接口很简单,但孪生结构却很复杂[3]。图中显示了可移动的II型双边界模型。孪生结构由运动的a-c孪生边界,调制孪生带和a-b孪生组成。

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