A monolithic isolated gate driver with on-chip transformer

摘要

A highly integrated monolithic isolated gate driver with on-chip transformer is proposed. The main idea is to have an on-chip high-frequency voltage controlled oscillator (VCO) to provide a GHz carrier. Therefore, the on-chip transformer size could be shrunken to dimensions less than 1 mm. Two on-chip transformer test structures are presented with dimension of 1020 μm × 860 μm. The stacked transformer has a higher coupling coefficient (~0.97). The tapped transformer has a higher isolation voltage (~3000 V). The on-chip transformer, the rectifier, and the driving stage are implemented in TSMC 0.25-μm HV technology. The simulations demonstrate the proposed monolithic isolated gate driver can provide 12-V gate-source voltage and drive 6000 pF load at 100 kHz and higher.