Parametric study of optimum gate-resistance for performance and short-circuit robustness of novel half-bridge IGBT modules

摘要

This paper jointly investigates the switching performance and the short-circuit (S.C) turn off behavior of a novel half-bridge (2in1) IGBT power module concept with the low stray inductance (Lσ), which has been available in the market since 2015. Since this package was designed for improving the performance of Si-based switches and is a pioneering solution for designing WBG switches through reducing the Lσ of the switch itself, investigations of S.C are an important task for both researchers and designers. The performance of a Half-bridge (2in1) Silicon N-channel IGBT has been examined with different temperatures, switching transients and testing under S.C conditions, where the extracted results offer a clear overview of S.C of Half-bridge (2in1) package and trade-offs between switch losses and short-circuit safe operating area (SCSOA), and finally prevention of false turn-on after short-circuiting due to Lσ.