Dept. of Electr. & Comput. Eng. Northeastern Univ. Boston MA USA;
adders; carbon nanotubes; field effect transistors; leakage currents; logic design; logic gates; nanoelectronics; nanotube devices; semiconductor device models; CNFET-based logic gate performance evaluation; I-V characteristics; carbon nanotube field effect transistor; full adder circuit; leakage current; power-delay product; submicro-nano scale manufacturing; technology roadmap; voltage 0.3 V; Carbon Nanotube Field-Effect Transistors (CNFETs); Delay; Fan-out; Power; Power Delay Product (PDP); Temperature;
机译:基于所有光学和/或逻辑门的二维光子晶体的性能评估
机译:宽带粉丝与FINFET宽敞栅极的绩效评估
机译:使用FWM评估光学逻辑门的性能
机译:基于CNFET的逻辑门的性能评估
机译:多值逻辑网络中多值逻辑门的设计和故障检测
机译:微流体逻辑门:压力驱动的两输入3D微流体逻辑门(Adv。Sci。2/2020)
机译:基于HFET的基于CNFET的设计三元逻辑设计和算术电路仿真
机译:所选智能像素的回顾:自电光效应器件,surfaceEmitting激光逻辑器件,双异质结构光电开关,二极管激光逻辑,淬火激光光学门