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Formation of Biaxially Textured MgO Buffer Layers using Ion-Beam Assisted Pulsed Laser Deposition

机译:使用离子束辅助脉冲激光沉积形成双轴织构的MgO缓冲层

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MgO thin films were deposited on amorphous substrates using ion-beam assisted pulsed laser deposition. The texture formation was investigated in-situ with RHEED. The microstructure of the films was observed by AFM. Using an ion beam at an angle of 55° with respect to the substrate normal, strong nucleation textures develop. Above 250℃ a cube texture is observed in films thinner than 10 nm. During further growth this nucleation texture changes in a way that the (200) direction becomes parallel to the ion beam. This change can be explained by the anisotropic sputter rate of MgO found in sputter experiments on single crystals. Moreover, MgO films were deposited homoepitaxially on MgO single crystals above 250℃ with internal stresses decreasing with increasing deposition temperature. This result gives rise to hope that homoepitaxial growth of MgO on the nucleation layer without ion-beam assistance should be possible in future PLD-experiments keeping the desired cube texture in thicker films.
机译:使用离子束辅助脉冲激光沉积将MgO薄膜沉积在非晶质衬底上。用RHEED原位研究织构的形成。通过AFM观察膜的微观结构。使用相对于基板法线成55°角的离子束,可形成强形核纹理。在250℃以上,在厚度小于10 nm的薄膜中观察到立方纹理。在进一步生长期间,该成核纹理以(200)方向平行于离子束的方式变化。这种变化可以用在单晶溅射实验中发现的MgO各向异性溅射速率来解释。此外,在250℃以上的MgO单晶上同质外延沉积了MgO薄膜,内应力随着沉积温度的升高而减小。该结果引起了希望,在将来的PLD实验中,在较厚的薄膜中保持所需的立方织构,在没有离子束辅助的情况下,可以在成核层上进行MgO的同质外延生长。

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