首页> 外文会议>High-Performance Ceramics III pt.1; Key Engineering Materials; vol.280-283 >Preparation and Electrical Properties of Dense Bi_4Ti_3O_(12) Ceramics by Spark Plasma Sintering
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Preparation and Electrical Properties of Dense Bi_4Ti_3O_(12) Ceramics by Spark Plasma Sintering

机译:放电等离子体烧结制备Bi_4Ti_3O_(12)致密陶瓷及其电学性能

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The family of bismuth layer-structured ferroelectrics is attractive from the viewpoint of their application as electronic materials such as dielectrics, piezoelectrics and pyroelectrics. However, during conventional sintering method, high sintering temperature and long sintering time were needed and it is difficult to get BIT ceramic with a density more than 95% of its theoretic value. In the present paper, we produce dense BIT pellet using a spark plasma sintering process. The results show that at a sintering temperature as low as 700℃/5min under a pressure of 25MPa, BIT ceramics with a density about 99% of its theoretic can be produced. The densities, grain size and electrical properties of the resulting ceramic were also investigated.
机译:从铋层结构的铁电体作为电介质,压电体和热电体等电子材料的应用的观点出发,具有吸引力。然而,在常规的烧结方法中,需要高的烧结温度和长的烧结时间,并且难以获得密度大于其理论值的95%的BIT陶瓷。在本文中,我们使用火花等离子体烧结工艺生产致密的BIT颗粒。结果表明,在25MPa的压力下,在低至700℃/ 5min的烧结温度下,可以生产出密度约为理论值99%的BIT陶瓷。还研究了所得陶瓷的密度,晶粒尺寸和电性能。

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