Improving Linearity and Efficiency of RF Power Transistors for Infrastructure Applications

摘要

There are a growing number of semiconductor technologies being applied to RF power transistor applications. These technologies include Si LDMOS FET, SiGe HBT, InGaP HBT, GaAs MESFET, AIGaAs pHEMT, SiC MESFET, AlGaN/GaN HEMT. The dependencies of linearity and efficiency of such technologies are often common such as trartsconductance derivatives, capacitance variations, breakdown effects and parasitic resistances. The presentation will overview the work that has been achieved to date to maximize linearity and efficiency in the most promising technologies as related specifically to infrastructure applications. The presentation will also address the increasing number of device and circuit level techniques that are being used to enhance these two important parameters as applied to IM3, ACPR and ACLR suppression in 3G systems such as W-CDMA/UMTS.