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Enhancement of Thermoelectric Efficiency of MnSi1.75 with the Addition of Externally Processed Nanostructured MnSi

机译:通过添加外部加工的纳米结构MnSi来提高MnSi1.75的热电效率

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Higher manganese silicide is one of the promising thermoelectric materials for waste heat recovery at medium temperature (500-700 u000b0;C). Improvement on thermoelectric performance of bulk thermoelectric higher manganese silicide MnSi1.75 is introduced by externally mixing 1 at% nanostructured MnSi to MnSi1.75. This method can reduce the thermal conductivity above 400 u000b0;C more than reducing the power factor of the higher manganese silicide. This would enhance the figure-of-merit ZT of MnSi1.75 to ZT0.5 without any doping at 570 u000b0;C. In comparison, the figure-of-merit of conventional MnSi1.75 is ZT0.3. This method can be easily applied to industrial manufacturing of this material to enhance its efficiency.
机译:高级硅化锰是用于中温(500-700 u000b0; C)废热回收的有前途的热电材料之一。通过将1at%的纳米结构MnSi外掺到MnSi1.75中,可以提高块状热电高锰硅化物MnSi1.75的热电性能。与降低高锰硅化物的功率因数相比,此方法可以将热导率降低至400 u000b0; C以上。这将使MnSi1.75的品质因数ZT提高到ZT0.5,而在570 u000b0; C下不进行任何掺杂。相比之下,常规MnSi1.75的品质因数为ZT Z0.3。这种方法可以很容易地应用于这种材料的工业生产以提高其效率。

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