Indirect Conversion Digital X-ray Imager using an Amorphous Selenium Photoconductor

摘要

In this work, we report preliminary results from a 32×32 pixel prototype array that integrates a-Si:H TFT pixels with optically sensitive lateral a-Se MSM detectors. The array was in-house fabricated and characterized. Recent advances in improving the wavelength sensitivity, dark current, photocurrent and quantum efficiency of the a-Se optically sensitive lateral device are also presented together with system-level characterization and the first image captured by the array.