Hole or Electron Doped C_(60) Polymer Using Free Electron Laser Irradiation

摘要

Polymerized Cgo crystals were grown using the free electron laser (FEL) irradiation. In order to promote the polymerization degree, hole or electron was doped in the Cm crystals grown by the liquid-liquid interfacial precipitation (LLIP) method to eliminate the degradation by oxidation. The specimen grown with the l_2 dissolved butylalcohol (BTA, CH3_(CH_2)_3OH) and the C_(60) saturation o-xylene solution, subsequently pressed at 7GPa, showed only Ag(2)-derived mode at 1456 cm~(-1) after the FEL irradiation. The specimen belonged to so-called F phase, which is not obtained by the typical photo-induced polymerization process. It was noted that the FEL irradiation for polymerization of C_(60) was quite useful.