首页> 外文会议>Fourth International Conference on Single Crystal Growth and Heat amp; Mass Transfer (ICSC - 2001) Vol.3; Sep 24-28, 2001; Obninsk, Russia >Electronic structure of Al_6Mg_4Cu quasicrystal on the base realistic QCIC atomic structure model
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Electronic structure of Al_6Mg_4Cu quasicrystal on the base realistic QCIC atomic structure model

机译:基于真实QCIC原子结构模型的Al_6Mg_4Cu准晶体的电子结构

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The electronic structure of Al_6Mg_4Cu quasicrystal has been calculated by means of self-consistent recursion method in TB-LMTO-ASA basis set in real space. The realistic model of atomic structure of the quasicrystal offered in [2] has been used in the calculation. The obtained total density of states (TDOS) has the typical form for quasicrystal with Fermi level in pseudo-gap. The local states in the form of sharp and high peaks has been observed at 1.5 Ry and 2 Ry below the occupied part of TDOS. The total width of occupied part of TDOS was equals 0.75 Ry without local states.
机译:利用自洽递归方法,在真实空间中以TB-LMTO-ASA为基础,计算了Al_6Mg_4Cu准晶体的电子结构。计算中使用了[2]中提供的拟晶体原子结构的真实模型。所获得的总状态密度(TDOS)具有准间隙中费米能级的准晶体的典型形式。在TDOS的被占部分以下1.5 Ry和2 Ry处观察到了尖峰和高峰形式的局部状态。在没有局部状态的情况下,TDOS占用部分的总宽度等于0.75 Ry。

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