Photoinduced element change inside silicon by femtosecond laser pulses irradiating in air

摘要

We demonstrated the photoinduced microchannels and element change inside silicon by femtosecond laser pulses at the wavelength of 800 nm, which is in the absorption region of silicon. The results of scanning electron microscope equipped with energy dispersive X-ray spectroscopy suggested that the element of silicon changed after the laser irradiated. We observed that the elements of photoinduced microchannels included silicon and oxygen. The incorporation of oxygen species into silicon probably resulted from the oxidation in the process of the laser irradiating the silicon. We also measured the mass percentage of different kinds of elements inside the irradiated silicon wafers.