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Growth behavior of nitride layers formed on chromium electrodeposit in plasma-nitriding

机译:等离子体氮化中铬电沉积物上氮化物层的生长行为

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摘要

The structural and compositional analysis on nitrides formed on an electroplated hard Cr layer during plasma-nitriding was conducted, and its growth kinetics was examined as a function of the plasma-nitriding temperature and time in order to establish a computer simulation model prediction for the growth behavior of the Cr-nitride layer. The Cr-nitrides formed during the plasma-nitriding at 550-720℃ are composed of outer CrN and inner Cr_2N layers. A nitrogen diffusion model in the multi-layer, based on fixed grid Finite Difference Method was applied to simulate the growth kinetics of Cr-nitride layers. By measuring the thickness of Cr-nitride layers as a function of the plasma-nitriding temperature and time, the activation energy ( Q) and the nitrogen diffusion constant (D_0) were determined for growth of CrN and Cr_2N. The reasonable good agreement was found in the growth kinetics of Cr-nitride layers between the simulation output and the experimental result.
机译:对等离子氮化过程中在电镀硬铬层上形成的氮化物进行了结构和成分分析,并检查了其生长动力学与等离子氮化温度和时间的关系,以建立计算机模拟生长预测模型氮化铬层的行为。在550-720℃下等离子氮化过程中形成的Cr氮化物由外CrN和内Cr_2N层组成。采用基于固定网格有限差分法的多层氮扩散模型,模拟了Cr-氮化物层的生长动力学。通过测量Cr氮化物层的厚度与等离子氮化温度和时间的关系,可以确定CrN和Cr_2N的生长的活化能(Q)和氮扩散常数(D_0)。在模拟输出和实验结果之间,在氮化铬层的生长动力学中发现了合理的良好一致性。

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