Performance of milliKelvin Si bolometers as x-ray and exotic particle detectors

摘要

Abstract: Silicon bolometers are currently under development for milliKelvin operation; these devices are being produced using Si wafer fabrication technology. The design and performance of individual bolometers, using doped layers with a thickness in the range 0.1 to 3 $mu@, are described. The use of epitaxial growth to replace ion implantation for improved performance is described and initial results reported. !15