首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >RESISTANCE, POWER LOSS, AND ADHESION OF CONTACT TAPES ON CIGS MODULES
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RESISTANCE, POWER LOSS, AND ADHESION OF CONTACT TAPES ON CIGS MODULES

机译:CIGS模块上的电阻,功率损失和接触带的粘附

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摘要

Sn-plated contact tapes were connected to CIGS solar modules and test layers using an optimised epoxy-based conductive adhesive. The tapes were adhered ⅰ) onto ZnO/CIGS/Mo (configuration "S"), ⅱ) onto ZnO/Mo (configuration "Z") and ⅲ) onto the Mo back contact layer (configuration "M") and tested without encapsulation. The peel strength of the contacts was significantly decreased by 1000 h of damp/heat (DH) exposure but not by thermal cycling (TC). The average contact resistance R_c of contact tapes in configuration S increased from about 100 mΩ up to about 1000 mΩ during DH exposure, caused by the increase of the ZnO sheet resistance R_(sq) and the contact resistivity p_c at the interface ZnO/adhesive/contact tape. Configuration Z and M basically enable considerably lower contact resistance values of about 5-10 mΩ without a significant increase during DH exposure. This result is attributed to the low and stable Mo sheet resistance controlling R_c of both configurations and a low contact resistivity ρ_c at the interface. Contacts in configuration M, however, suffer from severe Mo corrosion along the contact tapes. The power losses of solar modules caused by the contact resistance increase with a decreasing number n of cells and are < 0.1% for configurations M and Z. In the case of configuration S, the power losses were estimated > 1% for n < 60 and > 6% for n < 10 after 1000 h of DH exposure.
机译:使用优化的基于环氧树脂的导电胶将镀锡的接触带连接到CIGS太阳能模块和测试层。将胶带ⅰ)粘在ZnO / CIGS / Mo(配置“ S”)上,,)粘在ZnO / Mo(配置“ Z”)上,ⅲ)粘在Mo背接触层(配置“ M”)上,并进行测试,无需封装。暴露于湿热(DH)1000小时后,触点的剥离强度显着降低,但未因热循环(TC)降低。在DH暴露期间,配置S中的接触带的平均接触电阻R_c从大约100mΩ增加到大约1000mΩ,这是由于ZnO薄层电阻R_(sq)和界面ZnO /粘合剂/上的接触电阻率p_c的增加引起的接触带。配置Z和M基本上可使接触电阻值低得多,约为5-10mΩ,而在DH暴露期间则不会显着增加。该结果归因于两种构造的低且稳定的Mo薄层电阻控制R_c以及界面处的低接触电阻率ρ_c。但是,配置M的触点沿接触带会遭受严重的Mo腐蚀。由接触电阻引起的太阳能电池组件的功率损耗随着n电池数量的减少而增加,并且对于配置M和Z而言,<0.1%。对于配置S,对于n <60和60,估计功率损耗> 1%。 DH暴露1000 h后n <10时> 6%。

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