THERMAL DIFFUSION OF THE ATOMS IN LASER-ABLATED β-FeSi_2 THIN-FILMS

摘要

Semiconductuing silicide β-FeSi_2 thin films were grown on n-Si (111) substrates by a Pulsed laser deposition method. We have succeeded to observe the photoluminescence around 0.803 eV and studied the high temperature and longtime annealing at 900℃ for 1, 5, 8 and 20 hrs in an infrared lamp on pure N_2-atmosphere flow. The photoluminescence spectra of the samples showed A-band, B-band and C-band and the intensities were 0.803 eV, 0.841 eV, 0.766 eV respectively .The relation between the thickness of the β-FeSi_2 and the thermal diffusion were investigated with the rutherford back scattering spectrometry. To compare the Fe and Si ratio and the thermal diffusion of the atoms we studied the energy dispersive X- ray spectroscopy mapping profile images and succeeded to observe the thermal diffusion and the ratio of the Fe and Si is Fe: Si = 30: 70. The epitaxial layer of the β-FeSi_2, scanning electron microscope were also studied. The thermal diffusion of the Fe and Si on β-FeSi_2 was also found on the samples.