An Integrated View of Nonlinear Distortion Phenomena in Various Power Amplifier Technologies

摘要

This paper presents an integrated view of nonlinear distortion in various power amplifier, PA, technologies. Using very weak assumptions, it shows that large signal IMD sweet spots are inherent to a wide variety of PA technologies like Si MOSFET, Si LDMOS, Si BJT, GaAs MESFET, GaAs-AlGaAs HEMT, justifying their use in the design of highly linear and efficient PAs.