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A 130nm hybrid low dropout regulator based on switched mode control for digital load circuits

机译:基于开关模式控制的130nm混合低压降稳压器,用于数字负载电路

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A hybrid (digital and analog) low dropout regulator (LDO) utilizing switched mode control is designed in 130 nm CMOS for fine grain power management, fast droop recovery and robust small signal regulation of multi-VCC digital loads. The design provides an optimal trade-off of performance and accuracy by switching between a digital and an analog control loop. The hybrid topology achieves robust small signal regulation and fast recovery from large signal transients or power state transitions. Measurements from a 130nm test-chip show Near-Threshold Voltage (NTV) operation, fast transient response of 18 ns for a load step of 10.3mA and a peak current efficiency of 98.64%.
机译:在130 nm CMOS中设计了一种采用开关模式控制的混合(数字和模拟)低压差稳压器(LDO),以实现细粒度电源管理,快速下降恢复和对多VCC数字负载的鲁棒小信号调节。该设计通过在数字和模拟控制环路之间切换来提供性能和精度的最佳折衷。混合拓扑可实现鲁棒的小信号调节,并能从大信号瞬变或电源状态转变中快速恢复。在130nm测试芯片上进行的测量显示出近阈值电压(NTV)运行,负载阶跃为10.3mA时18ns的快速瞬态响应以及98.64%的峰值电流效率。

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