STUDY OF DECOMPOSITION REGULARITIES FOR A Zn-CONTAINING VOLATILE COMPLEX USED IN ZnO FILM SYNTHESIS

摘要

H_2O_2 (98 %) vapour passed through a reactor at 25Pa where a ZnO target was placed at 273K- 373K. Experiments were carried out on a flow- type vacuum device. H_2O_2 decomposition on ZnO surface accompanied by formation of a Zn-containing volatilerncomplex which transferred to the gas phase, and ZnO deposited on a substrate at condensation. As the substrate, five sequentially located quartz cylinders were used at 293K-423 K(T_n). Decomposition of the Zn-containing complex on quartz substrates carried out as a first- order reaction. 1. The complex decomposition constant (K_p) increased with the substrate temperature (T_n=293 K, K_p=7.05 sec~(-1); T_n = 373 K, K_p = 87 sec~(-1); T_n = 423 K, K_p =158 sec~(-1)). 2. The complex decomposition constant did not practically vary when the target temperature increased; the complex formation rate increased slightly.