Simulation investigation ultrasonically assisted grinding of SiC ceramics with single diamond abrasive grain

摘要

The present work deals with the simulation investigation of chip formation in ultrasonically assisted grinding (UAG) of SiC ceramics with single diamond abrasive grain in order to reveal the material removal mechanism in UAG of SiC materials. In simulation, smooth particle hydrodynamic (SPH) method coupling FEM modeling is employed to overcome the large material distortions that occur in the simulation analysis of single point cutting process when only the finite element method (FEM) is used. The abrasive-grain is modeled with finite element while the target workpiece is modeled by SPH particles. The simulation results revealed that normal and tangential forces in UAG are smaller compared to those in conventional grinding (CG) without ultrasonic vibration. The scratch profiles shows that the cutting path appears to be sinusoidal when ultrasonic vibration is introduced in grinding process, which leads to a higher material removal rate than that without ultrasonic vibration.