Effects of Doping, Strain and Size on the electrical properties of MoS_2 Nanoribbons

摘要

In this work, we have investigated size, doping and strain effect on the electrical properties of n-type and p-type MoS_2 monolayer, one of the most interesting two-dimensional layered materials. We found that the bandgap of the MoS_2 will reduce from 1.8 eV to 1.2 eV as the infinite lattice being shrunk into 10×10 nanoribbon. The electrical properties of a nanoscale MoS_2 monolayer exhibited large variation (≈20%) as its doping level or dopant position changes, although the band-gap varies slightly. The study on the strain effect indicates that the bandgap of infinite MoS_2 monolayer monotonically reduces as the increasing of the strain strength. The variation in electrical properties induced by size, doping and strain effect may post a serious challenge on the application in logic and memory devices.