Graphene and Quantum Dots Composite for Photovoltaic Devices

摘要

Large-area flexible and transparent optoelectronic devices were fabricated through non-covalent interaction between CdSe/ZnS core/shell quantum dots and single layer graphene. The photo-induced charge transfer was confirmed by fluorescence quenching experiments and photoconductivity measurements. Quantum dots decorated graphene device exhibits excellent photo-switching property making it promising as a long wavelength sensitive photodetector. 1-D (graphene)/ 0-D (QD) hybrid structure facilitates electron transfer faster. When used as photoelectrochemical cell anode, this hybrid material displays both high photon to current conversion efficiency (IPCE) and fast photo-switch response.