Temperature Dependent Variability Analysis of Threshold Voltage and On-Current for Optimum Switching Performance by Gallium Nitride-based Junctionless FinFET

摘要

Here we present the impact of temperature variation over the switching and on-state characteristics of a Gallium Nitride-based Junctionless FinFET. The fin-width and the channel length of the device are varied in a wide range, and a low to medium level channel doping along with the equivalent oxide thickness (EOT) from 0.6nm to 4nm considering a fixed oxide charge of 1*1012 cm-3 are scrutinized. All the corresponding cases are thoroughly investigated and our device has finally been placed in a Voltage Source Inverter (VS I) for optimal switching operation. In order to do that, we have also developed a methodology to assess the system-level performance impact of a novel device design - in the context of power electronics - for applications like electric vehicles, renewable energy, smart grid, and variable speed drives. The stated interfacing is to calculate the on-state power loss where GaN JL-FinFET has successfully surpassed the performance of a conventional SiC switch.