Landau Damping Effects on SO Limited Mobility

摘要

Surface optical phonons scattering is essential in determning the channel mobility of high- κ gate dielectric MOSFETs. Metal gates are believed to modulate the effects of high- κ phonons to some extent in comparison to poly-Si gates. In this work nonideal metal gate model is used to study the impact of SO scattering on the nMOSFET channel mobility. Landau damping effects, which are found to be important in the coupled plasmon-phonon scattering, are studied from the perspective of different criteria in selecting the Landau limits.