Etching of Germanium in Hydrogen Peroxide Solutions

摘要

In this paper, the etching behaviour of germanium in hydrogen peroxide solutions is described. Electrochemical experiments showed that the etching process is most probably purely chemical. The etch rate was found to depend upon the H_2O_2 concentration, the pH value, the amount of KC1 in the solution and , in some cases, upon the rotation rate. Based on all of these findings, possible etching mechanisms for Ge in H_2O_2 are discussed on a molecular level.