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3D Binder-free N-doped carbon /CNTs/FCP for high electrochemical capacitance supercapacitor

机译:用于高电化学电容超级电容器的3D无粘结剂N掺杂碳/ CNTs / FCP

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The binder-free flexible carbon paper (FCP) supported mutil-wall carbon nanotubes (CNTs) were synthesized via CVD method. Subsequently, polyaniline was deposited on the surface of CNTs/FCP, which was followed by polyaniline carbonization and KOH activation to obtain nitrogen-doped (N-doped) carbon/CNTs/FCP composite. The Raman spectroscopy, scanning electron microscope, transmission electron microscope investigation indicated that N-doped carbon/ CNTs/FCP was formed after the polyaniline carbonization and KOH activation, without destroying the intrinsic CNTs structure. Compared to the pristine CNTs/FCP, of which the specific capacitance(C_(sp)) was 5.23 F/g and 8.24 F/g in 1M H_2SO_4 and 0.5M KOH solution respectively, the reversible C_(sp) of N-doped carbon/CNTs/FCP reached 193.3 F/g (1M H_2SO_4) and 161.0 F/g (0.5M KOH), at the current density of 1 A/g. Moreover, this 3D structure N-doped carbon/CNTs/FCP shows good hydrophility and excellent cycling performance with little capacitance loss over long term galvanostatic charge-discharge, which is a promising electrode material for supercapacitor application.
机译:通过CVD法合成了无粘结剂柔性碳纸(FCP)负载的多壁碳纳米管(CNT)。随后,将聚苯胺沉积在CNTs / FCP的表面上,然后进行聚苯胺碳化和KOH活化,以获得氮掺杂(N掺杂)的碳/ CNTs / FCP复合材料。拉曼光谱,扫描电子显微镜,透射电子显微镜研究表明,在聚苯胺碳化和KOH活化后,形成了N掺杂的碳/ CNT / FCP,而没有破坏CNT的固有结构。与在1M H_2SO_4和0.5M KOH溶液中比电容(C_(sp))分别为5.23 F / g和8.24 F / g的原始CNTs / FCP相比,N掺杂碳的可逆C_(sp) / CNTs / FCP在电流密度为1 A / g时达到193.3 F / g(1M H_2SO_4)和161.0 F / g(0.5M KOH)。此外,这种3D结构的N掺杂碳/ CNT / FCP在长期恒电流充放电后表现出良好的亲水性和出色的循环性能,且电容损耗很小,这是用于超级电容器的有希望的电极材料。

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  • 会议地点 Shanghai(CN)
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    Zhengzhou Research Institute of CHALCO, Jiyuan Road,Shangjie District, Zhengzhou, 450041, China;

    Zhengzhou Research Institute of CHALCO, Jiyuan Road,Shangjie District, Zhengzhou, 450041, China;

    Zhengzhou Research Institute of CHALCO, Jiyuan Road,Shangjie District, Zhengzhou, 450041, China;

    Zhengzhou Research Institute of CHALCO, Jiyuan Road,Shangjie District, Zhengzhou, 450041, China;

    Zhengzhou Research Institute of CHALCO, Jiyuan Road,Shangjie District, Zhengzhou, 450041, China;

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